|Statement||edited by Anti-Pekka Jauho and Eugenia V. Buzaneva.|
|Series||NATO ASI series. Series E, Applied sciences ;, v. 328, NATO ASI., no. 328.|
|Contributions||Jauho, Antti-Pekka, 1952-, Buzaneva, E. V., North Atlantic Treaty Organization. Scientific Affairs Division., NATO Advanced Study Institute on Frontiers in Nanoscale Science of Micron/Submicron Devices (1995 ; Kiev, Ukraine)|
|LC Classifications||QC610.9 .F76 1996|
|The Physical Object|
|Pagination||xiv, 554 p. :|
|Number of Pages||554|
|LC Control Number||96036619|
Frontiers in Nanoscale Science of Micron/Submicron Devices Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design Author: Michael Mark Woolfson. Frontiers in Nanoscale Science of Micron/Submicron Devices Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design Brand: (Les Editions de Physique, Paris ); Frontiers in Nanoscale Science of Micron/Submicron Devices. edited by A.P. Jauho and E. Buzaneva (Kluwer Academic Publishers, Dordrecht-Boston-London ) Google ScholarAuthor: A. Knorr, B. Hanewinkel, H. Giessen, S. W. Koch. Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland in Frontiers in Nanoscale Science of Micron/Submicron Devices, NATO ASI Series E, Vol. Cited by:
Abstract. The physics of mesoscopic transport phenomena [5–8] is a very rapidly developing field in the modern condensed-matter physics which is very promising for the applications in small (nano-size) electron devices [9, 17, 11–13] and very interesting for studying of the quantum interference effects [6, 10, 15] and the quantum effects of localization in dirty or narrow-band Author: M. Yu Kagan. 1. 1 Power-dissipation trends in CMOS circuits Shrinking device geometry, growing chip area and increased data-processing speed performance are technological trends in the integrated circuit industry to enlarge chip functionality. Already in Gordon Moore predicted that the total number of devices on a chip would double every year until the s and every 24 months in . Synthesis of Crystalline Ag Nanoparticles (AgNPs) from “Frontiers in Nanoscale. Science of Micron/Submicron Devices,” Kluwer Aca-. Titanium (Ti) and its alloys are widely used for medical and dental implant devices—artificial joints, bone fixators, spinal fixators, dental implant, etc. —because they show excellent corrosion resistance and good hard-tissue compatibility (bone formation and bone bonding ability). Osseointegration is the first requirement of the interface structure between Cited by: 3.
A new UV reflection anisotropy spectrometer and its application to the Au()/electrolyte surface (Journal article). Scheme of the interaction between bone and implant at micro, submicro, and nanoscale. R. A. Gittens et al., “The effects of combined micron-/submicron-scale surface roughness and nanoscale features on cell proliferation and differentiation,” Biomaterials 32(13) Author: Seiji Yamaguchi, Silvia Spriano, Martina Cazzola. You can write a book review and share your experiences. Other readers will always be interested in your opinion of the books you've read. Whether you've loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them. Chapter 14 CARBON-NANOTUBE-BASED NANOTECHNOLOGY IN AN INTEGRATED MODELING AND SIMULATION ENVIRONMENT Deepak Srivastava, Fedor Dzegilenko, Stephen Bamard, Subhash Saini NASA Ames Research Center, Moffett Field, California, USA Madhu Menon Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky, Cited by: 2.